Output details

Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

The collaboration between CNM (contact amador.perez@imb-cnm.csic.es) and Warwick had been in place for five years when this paper was published, and on the strength of the outputs we began work on the topic of AlGaN/GaN HEMT devices, spreading our collaboration to include specialists from the Centre for Research into Hetero-Epitaxy and their Applications (CRHEA – a French research institute – contact Yvon.Cordier@crhea.cnrs.fr). This paper was the third of four papers in this collaboration on this subject area, and has directly inspired work from South Korea (DOI: 10.1063/1.4790384) and Japan (DOI: 10.1063/1.4773511)