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Output details

15 - General Engineering

University of Warwick

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Output 197 of 344 in the submission
Article title

Molecular-beam epitaxy and lattice parameter of GaNxSb1−x: deviation from Vegard's law forx> 0.02

Type
D - Journal article
Title of journal
Journal of Physics D: Applied Physics
Article number
-
Volume number
46
Issue number
26
First page of article
264003
ISSN of journal
1361-6463
Year of publication
2013
URL
-
Number of additional authors
6
Additional information

Reports on the important issue of the structural effect of incorporation of N into GaSb and provides the data to allow the modelling of the incorporation of N to provide an explanation of what was occurring. This work was also the subject of an invited talk given at UK Semiconductors meeting in Sheffield (July 2012).

Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-