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Temperature dependence of mid-infrared electroluminescence in type II InAsSb/InAs multi-quantum well light-emitting diodes.

This paper reports the creation of a unique MBE growth technique, using which we fabricate high quality InAsSb/InAs multi-quantum wells (MQWs) with abrupt interfaces. The technique has successfully led to the first mid-infrared LEDs emitting at wavelengths up to 4.5 um and operating at room temperature, and can be extended to make complicated quantum structures containing arsenide and antimonide for applications including AlSb/InAs quantum cascade lasers and GaSb/InAs superlattice photodetectors. Funded by EPSRC and HM Government Communications Centre, this work has attracted collaboration with Gas Sensing Ltd in for the development of new, more efficient MQW LEDs.