Output details
15 - General Engineering
Lancaster University
Article title
Midinfrared InAsSbN/InAs Multiquantum Well Light-Emitting Diodes
Type
D - Journal article
Title of journal
Advances in OptoElectronics
Article number
145012
Volume number
2011
Issue number
n/a
First page of article
-
ISSN of journal
1687-563X
Year of publication
2011
Number of additional authors
4
Additional information
First demonstration of a dilute nitride (InAsSbN) quantum well (QW) LED operating at room temperature within the technologically important 3-4 µm spectral range. This paper presented a breakthrough in the molecular beam epitaxial growth (MBE) of InAsSbN QWs to produce material of sufficiently high quality (achieved through optimization of the growth conditions), and detailed analysis on the devices provided new information about the QW bandstructure. The research was supported by QinetiQ and the USA Army Research Laboratory (ARL) (Stefan Svensson). This led to new collaborations with the Army Research Laboratory (through RAEng Fellowship) and funding from EPSRC (EP/J015849/1).
Interdisciplinary
-
Cross-referral requested
-
Research group
A - Micro-Nano Systems
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
