Output details
15 - General Engineering
Lancaster University
Room temperature photoluminescence at 4.5 mu m from InAsN
Funded by EPSRC and in collaboration with Hull, Sheffield, National Taiwan University, and Kidde plc. this research presents the successful MBE growth of a novel class of semiconductor – the dilute nitrides. It is the first demonstration of narrow bandgap InAsN alloy with high N content and room temperature photoluminescence up to 4.5 um and opens new routes for realising advanced MIR optoelectronics. It has led to follow-on EPSRC grants to develop mid-infrared lasers and photodetectors (EP/J015849/1 with Sheffield, Nottingham, Selex Galileo and CST Ltd) and Quantum Dot Materials for Solar Cells (EP/G070334/1, Collaborative Research in Energy with South Africa).