Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Leeds
In-assisted desorption of native GaAs surface oxides
LL-4: Cleaning of a GaAs surface prior to MBE growth is conventionally achieved by thermal desorption of the surface oxide layer. However, this results in a pitted surface owing to GaAs removal, requiring planarization with a thick GaAs layer. This prevents regrowth of nanostructures on patterned substrates close to the regrowth interface. We demonstrated indium-assisted desorption of native GaAs surface oxides at low substrate temperatures, showing feasibility for the regrowth of high quality quantum dot structures. The work was patented (WO2012/123741, priority 14/03/2011, now under examination in Europe/US/China), and technology translation is being explored with Toshiba, inter alia.