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13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Leeds
Intersubband carrier scattering in n- and p-Si∕SiGe quantum wells with diffuse interfaces
RWK-1: This paper presents the first comprehensive analysis of the effects of interdiffusion at Si/SiGe quantum well interfaces on electronic energy states and carrier scattering processes. It led to the design of, and successful interpretation of experiments on, Ge/SiGe electro-optic modulators, which were grown, fabricated, and characterized in Warwick and Surrey Universities (Optics Letters 36, 4158 (2011); J. Applied Physics 112, 123105 (2012)), as part of the £5M UK Silicon Photonics programme (EP/F002548, PI:Kelsall, £588,714)). It also contributed to the award of a £1.7M EPSRC grant with Glasgow/Warwick Universities (EP/H02350X, PI:Kelsall, £276,578) to investigate development of SiGe-based quantum cascade lasers.
