Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Liverpool John Moores University
Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs
* The first paper ever to demonstrate that States-Beyond-Bandgap (SBB) can be extracted quantitatively by the pulse capacitance–voltage technique.
* Significant as it revealed that mobility evaluated without considering SBBs can lead to underestimation by over 30% and the widely-observed nitrogen-induced mobility degradation is an artifact, opening a new way for device optimization.
* One reviewer of this paper commented ‘This manuscript is exceptionally well done with thorough analysis of experimental and modeling data’. The paper led to an invited paper at the “11th IEEE International Conference on Solid-State and Integrated Circuit Technology”.