Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Liverpool John Moores University
Read and pass disturbance in the programmed states of floating gate flash memory cells with high-κ interpoly gate dielectric stacks
* The first paper ever that identified the electron trapping and detrapping in the IPD stacks as the source for the read/pass disturbance in Flash memory.
* Significant as the identification of the origin of the disturbance opens a way for its minimization through material selection and structure optimisation in the development of future Flash memory technology.
* The results have led to two new official projects (600,000 Euros) collaborating with world leading research consortium at IMEC including Intel and Samsung from 2014-2016 (Dr. Houdt, IMEC Memory Group Manager, vanhoudt@imec.be), to investigate the new 3D and RRAM memory technology, respectively.