Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Imperial College London : B - Metallurgy and Materials
Article title
Deviations from Vegard's law in ternary III-V alloys
Type
D - Journal article
Title of journal
Physical Review B
Article number
ARTN 073201
Volume number
82
Issue number
7
First page of article
-
ISSN of journal
1098-0121
Year of publication
2010
URL
-
Number of additional authors
4
Additional information
III-V semiconductors are alloyed to satisfy device band gaps requirements. These alloys are fabricated on inert substrates or as multi-layers with strain-matching an imperative. This paper reports and demonstrates the accuracy of a relationship linking the relative size of the group III atoms (B, Al, Ga & In) in As ternary alloys and the predicted magnitude of the deviation from Vegard’s law, thereby facilitating future accurate composition selection. Full funding for an overseas PhD student was secured from the King Abdullah University of Science&Technology(KAUST) to extend this approach to alloys containing other group V elements and surface structure relaxation predictions.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
