Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
Liverpool John Moores University
A New Mobility Extraction Technique Based on Simultaneous Ultrafast I-d-V-g and C-cg-V-g Measurements in MOSFETs
* The first paper ever to propose and demonstrate a novel technique for evaluating carrier mobility based on simultaneous measurement of displacement and conduction currents.
* Significant as this new technique overcomes all the reported problems in existing techniques for advanced MOSFETs with high gate leakage and fast trapping in gate dielectrics. Together with its easy implementation, it serves as a robust tool for process development and material selection.
* This new technique has been included in the application notes of Keithley’s latest generation of 4200-SCS parameter analyser (http://www.keithley.com/data?asset=57662) and is disseminated to Keithley’s customers on a global scale.
