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Output details

13 - Electrical and Electronic Engineering, Metallurgy and Materials

Imperial College London : A - Electrical and Electronic engineering

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Output 34 of 176 in the submission
Article title

An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation

Type
D - Journal article
Title of journal
IEEE Transactions on Electron Devices
Article number
-
Volume number
58
Issue number
12
First page of article
4414
ISSN of journal
0018-9383
Year of publication
2011
URL
-
Number of additional authors
4
Additional information

This is the first paper to report the impact (on performance) of scaling Ion-Sensitive Field-Effect Transistors (ISFETs) using a commercial CMOS process. This is significant as it is this miniaturisation that has driven next generation DNA sequencing; reducing the cost of human genome sequencing by increasing the number of ISFET sensors per CMOS die (Nature. 2011 Jul 20;475(7356):348-52). This work has directly guided the development of the core sensor technology that has been commercialised by DNA electronics Ltd (contact:sam.reed@dnae.co.uk) to develop DNA diagnostic systems (Nature Methods 10;641–646(2013)) and genome sequencing technology, licensed to Ion-Torrent Systems (Nature Biotechnology 30;1054–1058(2012)).

Interdisciplinary
-
Cross-referral requested
-
Research group
C - Circuits and Systems
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-