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13 - Electrical and Electronic Engineering, Metallurgy and Materials

Imperial College London : B - Metallurgy and Materials

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Article title

Dislocation movement in GaN films

Type

D - Journal article

DOI

10.1063/1.3532965

Title of journal

Applied Physics Letters

Article number

ARTN 261907

Volume number

Issue number

First page of article

ISSN of journal

0003-6951

Year of publication

2010

URL

Number of additional authors

Additional information

This paper revealed new mechanisms of dislocation movement in III-nitrides which dominate dislocation behaviour in these materials and influence device efficiencies. This work led to a SET for Britain award (Physics) 2010 for MA Moram (lead author) and subsequently to a Leverhulme Research Leadership Award 2012, the collaborative EPSRC grant EP/J003603/1, appointment to the International Steering Committee of the well-established International Conference on Defects in Semiconductors and a forthcoming invited review in International Materials Reviews.

Interdisciplinary

Cross-referral requested

Research group

None

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract