Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University College London
Article title
Long lifetimes of quantum-dot intersublevel transitions in the terahertz range
Type
D - Journal article
DOI
Title of journal
Nature Materials
Article number
-
Volume number
8
Issue number
10
First page of article
803
ISSN of journal
1476-1122
Year of publication
2009
URL
-
Number of additional authors
11
Additional information
Semiconductor quantum dots are a highly attractive alternative for terahertz devices, because of their intrinsic discrete energy levels. In this paper, we present the first measurements, and theoretical description, of the intersublevel carrier relaxation in quantum dots for transition energies in the few terahertz range. Long intradot relaxation times (1.5 ns) are found for level separations of 14 meV (3.4 THz), decreasing very strongly to similar to 2 ps at 30 meV (7 THz). This publication paves the way for quantum-dot terahertz device development, providing the fundamental knowledge of carrier relaxation times. Cited over 80 times on GoogleScholar.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
