Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University College London
Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate
Incorporating lasers onto silicon photonics and microelectronics has been attempted unsuccessfully to enable silicon photonics for last thirty years. This work demonstrated the first III-V quantum-dot laser on Ge, which bridges III-V compound photonics components with silicon platform. This work led to 10 invited talks (incl. Photonics West 2012 and OFC 2013), a patent application, and laid the foundation for the renewal of Royal Society University Research Fellowship to H. Liu and the successful application of an EPSRC grant (EP/K029118/1, £600,519, PI: Liu). The work was widely publicised by international news agencies, such as Photonics.com and Solid-State Technology.
