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Applicability of the k.p method to modeling of InAs/GaSb short-period superlattices

There has been a long-standing controversy regarding energy levels in InAs/GaSb short-period superlattices (SPSLs). Other semiconductor heterostructures are well described by the computationally simple k.p method, but it systematically overestimates the energy gap in InAs/GaSb SPSLs. For the past decade, complex models or ‘fudge factors’ have been used to describe them. We show that by including realistic graded, asymmetric composition profiles at the InAs/GaSb interface within the k.p method, experimental data (energy levels from optical spectra) can be simply modelled. This important development reduces device design time and contributes to a deeper understanding of SPSLs structure and behaviour.