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15 - General Engineering

Swansea University

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Output 3 of 287 in the submission

Article title

A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate

Type

D - Journal article

DOI

10.1063/1.4731630

Title of journal

Applied Physics Letters

Article number

Volume number

100

Issue number

First page of article

263507

ISSN of journal

0003-6951

Year of publication

2012

URL

Number of additional authors

Additional information

LD MagFET device, new generation of IC compatible magnetic sensors with increased sensitivity, suitable for Magnetic Sensitive Power IC technology, is designed, manufactured and tested; this is the latest result related to our work on Power IC Technology development (originally funded by £1M TSB grant). Device’s current-related relative magnetic sensitivity estimated as 30% 1/T is substantially, i.e., order of magnitude, higher than the one for the conventional split-drain silicon MagFETs reported so far.

Interdisciplinary

Cross-referral requested

Research group

C - Electronic Systems Design Centre

Proposed double-weighted

Double-weighted statement

Reserve for a double-weighted output

Non-English

English abstract