Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Sheffield : A - Electronic and Electrical Engineering
Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes
A novel dry etching method was invented with excellent selective etch properties. It overcomes the problems with etch damage which previously plagued traditional gate recess dry etches in this materials system. The optimised recipe produced excellent device characteristics and provided the background IP that was instrumental in winning a TSB grant awarded in collaboration with Diamond Microwave Devices (DMD) (Ł3.1 M in collaboration with INEX, MBDA, Element6). High RF power devices were demonstrated using this technology under this programme, which benefited DMD through gaining confidence in the technology which fed into systems design.