Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Surrey
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Article title
Co-Implantation of Carbon and Protons: An Integrated Silicon Device Technology Compatible Method to Generate the Lasing G-Center
Type
D - Journal article
Title of journal
Advanced Functional Materials
Article number
-
Volume number
22
Issue number
13
First page of article
2709
ISSN of journal
1616301X
Year of publication
2012
URL
-
Number of additional authors
-
Additional information
This is the first CMOS compatible method for the efficient generation of the lasing carbon related G-Centre in silicon, which led to a patent filing. This approach to forming the G-centre, which is known to lase in silicon, offers a route to room temperature lasing and optical amplification at 1.3 micron in silicon. This body of work has a pipeline agreement on new IP under Homewood’s European Research Council Advanced Investigator Grant – Silicon Lasers and Optical Amplifiers. An ERC Proof of Concept Grant, fully integratable lasers and optical amplifiers in silicon recently awarded to develop work.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
