Output details
13 - Electrical and Electronic Engineering, Metallurgy and Materials
University of Sheffield : A - Electronic and Electrical Engineering
Article title
Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K
Type
D - Journal article
Title of journal
IEEE Journal of Quantum Electronics
Article number
-
Volume number
47
Issue number
6
First page of article
858
ISSN of journal
15581713
Year of publication
2011
URL
-
Number of additional authors
4
Additional information
Reports the first set of ionization parameters and low temperature data that can be used to design novel InAs APDs that can outperform photomultiplier-tubes (PMT). When cooled InAs APDs are better than Silicon APDs and PMTs. It is key to an EPSRC grant (EP/J015814/1) with Lancaster and Nottingham totalling £0.84M, and ESA contract (No.4000107110/12/NL/CBi, €500k) and led to a CASE studentship sponsored by LAND Ametek (Jon.Willmott@ametek.co.uk), a world leader in radiation thermometry, to develop InAs based thermometer. It was presented as an invited talk in the 2011 IEEE Photonics Conference.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
