Output details
15 - General Engineering
University of Liverpool
Article title
Dielectric relaxation of lanthanum doped zirconium oxide
Type
D - Journal article
Title of journal
Journal of Applied Physics
Article number
-
Volume number
105
Issue number
4
First page of article
044102
ISSN of journal
00218979
Year of publication
2009
URL
-
Number of additional authors
6
Additional information
Elucidation of the dielectric properties of high-k film with enhanced permittivity using a lanthanum precursor developed with SAFC Hitech. The work was exploited in collaboration with Tyndall Institute, Cork, NXP, AMD, Numonyx and others within the EU project REALISE (evidence file Chalker2-1.pdf, www.tyndall.ie/projects/realise/index.html). Numonyx (Micron Technology Inc, from 2010), a leading flash memory manufacturer, has identified LZO as a candidate for improved flash memory cards and USB drives targeted for the market in 2014.
Interdisciplinary
-
Cross-referral requested
-
Research group
None
Proposed double-weighted
No
Double-weighted statement
-
Reserve for a double-weighted output
No
Non-English
No
English abstract
-
