Output details

Accurate statistical description of random dopant-induced threshold voltage variability

Production yield is crucial to the $300B/annum semiconductor industry, and accurate statistical prediction of device/circuit yield is only possible through large-scale statistical device simulation. This work, funded by EPSRC (EP/E003125/1), initiated the use of high throughput computing and databases in the statistical analysis of device variability for ensembles of 1e5 devices. Roy was invited to talk at ICCAD (San Jose, 2009) and SemiOI (Kyiv, 2010) as a result. The methodology developed to handle >25k parallel runs and Gbytes of data has been commercialized via a spin out company, and is core to its GARAND modelling tool (www/goldstandardsimulations.com/products/garand).